62-0203PBF
MOSFET P-CH 12V 16A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies 62-0203PBF is a P-Channel power MOSFET from the HEXFET® series. This component features a Drain-Source Voltage (Vdss) of 12V and a continuous Drain current (Id) of 16A at 25°C. With a maximum power dissipation of 2.5W (Ta) and a low on-resistance (Rds On) of 7mOhm at 16A and 4.5V Vgs, it is suitable for demanding applications. The device operates across a wide temperature range of -55°C to 150°C (TJ). Key parameters include a Gate Charge (Qg) of 91 nC (Max) @ 4.5V and Input Capacitance (Ciss) of 8676 pF (Max) @ 10V. It is supplied in an 8-SOIC package suitable for surface mounting. This MOSFET is utilized in automotive, industrial, and power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 16A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 91 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8676 pF @ 10 V |
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