62-0136PBF
MOSFET N-CH 30V 19A 8-SOICManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies MOSFET N-Channel 62-0136PBF features a 30V drain-to-source breakdown voltage and a continuous drain current of 19A at 25°C ambient. This N-Channel MOSFET offers low on-resistance, specified at a maximum of 4.5mOhm at 19A and 10V Vgs. The device has a gate charge of 44 nC (max) at 4.5V Vgs and an input capacitance of 3710 pF (max) at 15V Vds. Designed for surface mounting, it is packaged in an 8-SOIC configuration with a maximum power dissipation of 2.5W. The operating temperature range is -55°C to 150°C. This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | - |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TA) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 19A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3710 pF @ 15 V |
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