62-0095PBF
MOSFET N-CH 20V 10A/12A 8SOICManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies N-Channel MOSFET, part number 62-0095PBF, offers a 20V drain-source voltage with a continuous drain current of 10A (ambient) and 12A (case) at 25°C. This device features a maximum on-resistance of 13.4mOhm at 10A and 10V, and a gate charge of 11 nC at 4.5V. With a thermal resistance, junction to ambient, of 62.5 °C/W and a maximum power dissipation of 2W, it is suitable for surface mount applications. The MOSFET operates across a temperature range of -55°C to 150°C. This component is utilized in industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | - |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.4mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Supplier Device Package | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 10 V |
Request a Quote
Clients Also Buy
IRL3705ZLPBF
MOSFET N-CH 55V 75A TO262
IRF3805STRLPBF
MOSFET N-CH 55V 75A D2PAK
IPB073N15N5ATMA1
MOSFET N-CH 150V 114A TO263-3
