62-0063PBF
MOSFET N-CH 12V 15A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number 62-0063PBF, features a 12 V drain-source voltage and a continuous drain current of 15 A at 25°C. This component offers a low on-resistance of 8 mOhm maximum at 15 A and 4.5 V gate-source voltage. The device utilizes advanced MOSFET technology for efficient power switching. Key parameters include a gate charge of 40 nC maximum and an input capacitance of 2550 pF maximum. Designed for surface mounting, it is housed in an 8-SOIC package. The component operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 15A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1.9V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2550 pF @ 6 V |
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