2N7002L6327HTSA1
MOSFET N-CH 60V 300MA SOT23-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies OptiMOS™ 2N7002L6327HTSA1 is an N-Channel MOSFET designed for efficient switching applications. This component features a drain-source breakdown voltage (Vdss) of 60V and a continuous drain current (Id) of 300mA at 25°C. With a maximum on-resistance (Rds On) of 3 Ohms at 10Vgs and 500mA, it offers low conduction losses. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate charge (Qg) of 0.6 nC at 10Vgs. Input capacitance (Ciss) is rated at a maximum of 20 pF at 25Vds. Packaged in the PG-SOT23-PO (TO-236-3, SC-59, SOT-23-3) surface mount configuration, it has a maximum power dissipation of 500mW. This MOSFET is suitable for use in the automotive and industrial sectors.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PG-SOT23-PO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 20 pF @ 25 V |
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