SIDC85D170HX1SA2
DIODE GP 1.7KV 150A WAFERManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies SIDC85D170HX1SA2 is a General Purpose Diode designed for high-voltage applications. This component features a maximum DC reverse voltage (Vr) of 1700 V and an average rectified forward current (Io) of 150 A. The forward voltage drop (Vf) is specified at a maximum of 1.8 V at 150 A. Reverse leakage current at Vr is a low 27 µA @ 1700 V. This device utilizes standard recovery speed with a rating greater than 500 ns for currents above 200 mA. The operating junction temperature range is from -55°C to 150°C. The SIDC85D170HX1SA2 is supplied as a die, sawn on foil, suitable for surface mount integration. This diode is commonly employed in power electronics systems, including industrial motor drives, renewable energy inverters, and high-voltage power supplies.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 150A |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1700 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 150 A |
| Current - Reverse Leakage @ Vr | 27 µA @ 1700 V |
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