SIDC78D170HX1SA1
DIODE GP 1.7KV 150A WAFERManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies SIDC78D170HX1SA1 is a General Purpose Diode designed for high-voltage, high-current applications. This bare die component, presented sawn on foil for ease of handling, features a maximum DC reverse voltage (Vr) of 1700 V and an average rectified forward current (Io) of 150 A. The forward voltage drop (Vf) is specified at a maximum of 1.8 V at 150 A, with a low reverse leakage current of 27 µA at 1700 V. Operating across a junction temperature range of -55°C to 150°C, this diode utilizes standard recovery speed technology, characterized by recovery times greater than 500 ns and currents greater than 200 mA. Its die package is suitable for advanced power module integration in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 150A |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1700 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 150 A |
| Current - Reverse Leakage @ Vr | 27 µA @ 1700 V |
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