SIDC56D60E6X1SA1
DIODE GP 600V 150A WAFERManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies SIDC56D60E6X1SA1 is a high-performance general-purpose diode designed for demanding applications. This component features a 600 V reverse voltage rating and a substantial 150 A average rectified forward current capability. With a forward voltage drop of only 1.25 V at its maximum forward current, it offers efficient power conversion. The SIDC56D60E6X1SA1 operates within a temperature range of -55°C to 150°C and exhibits a low reverse leakage current of 27 µA at 600 V. Its construction as a die, sawn on foil, facilitates surface mount integration. This diode is suitable for use in power supplies, motor control, and industrial automation systems that require robust and reliable rectification.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 150A |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 A |
| Current - Reverse Leakage @ Vr | 27 µA @ 600 V |
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