SIDC50D60C6X1SA1
DIODE GP 600V 200A WAFERManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies SIDC50D60C6X1SA1 is a high-performance general-purpose diode designed for demanding applications. This wafer-level component features a 600V reverse voltage rating and a 200A average rectified forward current (Io). With a maximum forward voltage (Vf) of 1.9V at 200A, it offers efficient power handling. The diode exhibits a low reverse leakage current of 27 µA at 600V. Its standard recovery speed, characterized as >500ns, is suitable for various power switching circuits. The SIDC50D60C6X1SA1 is presented in a sawn-on-foil, die-level package, suitable for surface mounting. Operating across a junction temperature range of -40°C to 175°C, this component finds utility in industrial power supplies, motor control, and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 200A |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.9 V @ 200 A |
| Current - Reverse Leakage @ Vr | 27 µA @ 600 V |
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