SIDC42D60E6X1SA1
DIODE GP 600V 100A WAFERManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies SIDC42D60E6X1SA1 is a 600V, 100A general-purpose diode in a wafer die package, sawn on foil. This component features a maximum forward voltage of 1.25V at 100A and a reverse leakage current of 27µA at 600V. Operating across a junction temperature range of -55°C to 150°C, it utilizes standard recovery technology with a speed greater than 500ns at >200mA. This robust diode is suitable for applications in power supply design, industrial motor control, and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 100A |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 100 A |
| Current - Reverse Leakage @ Vr | 27 µA @ 600 V |
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