SIDC42D120H8X1SA3
DIODE GP 1.2KV 75A WAFERManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies SIDC42D120H8X1SA3 is a high-voltage rectifier diode designed for demanding power conversion applications. This component features a 1200 V reverse voltage rating and a continuous average forward current capability of 75 A, making it suitable for use in industrial power supplies, motor control, and high-power switching applications. The diode exhibits a maximum forward voltage drop of 1.97 V at 50 A and a low reverse leakage current of 27 µA at its maximum rated voltage. Operating across a junction temperature range of -40°C to 175°C, the SIDC42D120H8X1SA3 utilizes standard recovery speed characteristics. The component is supplied in a wafer form factor, sawn on foil, for integration into custom power module assemblies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 75A |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.97 V @ 50 A |
| Current - Reverse Leakage @ Vr | 27 µA @ 1200 V |
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