SIDC32D170HX1SA3
DIODE GP 1.7KV 50A WAFERManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies SIDC32D170HX1SA3 is a general-purpose diode designed for high-voltage applications. This component features a 1700 V reverse voltage rating and a 50 A average rectified forward current capability. The forward voltage drop at 50 A is 1.8 V, with a reverse leakage current of 27 µA at 1700 V. Constructed with standard technology, it offers a recovery time greater than 500 ns. The SIDC32D170HX1SA3 is supplied as a die, sawn on foil, suitable for surface mounting. Operating temperature ranges from -55°C to 150°C. This diode is utilized in industries such as industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 50A |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1700 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 50 A |
| Current - Reverse Leakage @ Vr | 27 µA @ 1700 V |
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