SIDC30D60E6X1SA1
DIODE GP 600V 75A WAFERManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies SIDC30D60E6X1SA1 is a high-performance general-purpose diode designed for demanding applications. This component features a maximum DC reverse voltage of 600 V and an average rectified forward current handling capability of 75 A. The forward voltage drop at its rated current is a low 1.25 V, ensuring efficient power conversion. Exhibiting a reverse leakage current of only 27 µA at 600 V, it minimizes standby power consumption.
The SIDC30D60E6X1SA1 utilizes standard recovery technology with a speed characteristic of >500ns for currents greater than 200 mA. Its surface mount configuration, provided as a die sawn on foil, is suitable for high-density board designs. Operating across a junction temperature range of -55°C to 150°C, this Infineon Technologies diode is well-suited for use in power supplies, industrial motor control, and automotive electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 75A |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 75 A |
| Current - Reverse Leakage @ Vr | 27 µA @ 600 V |
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