SIDC26D60C6
DIODE GP 600V 100A WAFERManufacturer: Infineon Technologies
Categories: Single Diodes
Quality Control: Learn More
Infineon Technologies SIDC26D60C6 is a high-performance rectifier diode designed for demanding power applications. This component features a 600V reverse voltage rating and a robust 100A average forward current capability, suitable for handling significant power loads. The forward voltage drop at 100A is a low 1.9V, contributing to improved system efficiency. With a reverse leakage current of just 27 µA at 600V, it minimizes standby power consumption. The SIDC26D60C6 operates across a wide junction temperature range of -40°C to 175°C, ensuring reliability in harsh environments. Its die form factor, sawn on foil, facilitates integration into custom power modules and high-density designs. This diode is commonly employed in industrial power supplies, motor drives, and renewable energy systems where efficient and reliable rectification is paramount. The technology utilized is standard recovery, with a speed specification exceeding 500ns for currents greater than 200mA.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 100A |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.9 V @ 100 A |
| Current - Reverse Leakage @ Vr | 27 µA @ 600 V |
Request a Quote
Clients Also Buy
D126A45CXPSA1
DIODE GEN PURP 4.5KV 200A
BAS1602WH6327XTSA1
DIODE GEN PURP 80V 200MA SCD-80
IDK09G65C5XTMA2
DIODE SIL CARB 650V 9A TO263-2
