SIDC24D30SIC3
DIODE SIL CARB 300V 10A WAFERManufacturer: Infineon Technologies
Categories: Single Diodes
Quality Control: Learn More
Infineon Technologies SIDC24D30SIC3 is a Silicon Carbide (SiC) Schottky diode designed for demanding applications. This component offers a 300V reverse voltage capability and a 10A average rectified current rating. Its key characteristic is the absence of reverse recovery time, exceeding 500mA. The forward voltage drop is rated at a maximum of 1.7V at 10A. With a junction operating temperature range of -55°C to 175°C and a low reverse leakage of 200 µA at 300V, this device exhibits excellent thermal and electrical performance. The SIDC24D30SIC3 utilizes SiC technology, known for its superior efficiency and reliability in high-power conversion systems. Supplied as a die, sawn on foil, this component is suitable for surface mount applications in industries such as automotive, industrial power supplies, and renewable energy.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 600pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 300 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 300 V |
Request a Quote
Clients Also Buy
IDDD04G65C6XTMA1
DIODE SIL CARB 650V 13A HDSOP-10
BAS16E6393HTSA1
DIODE GEN PURP 80V 250MA SOT23
IDH10SG60CXKSA2
DIODE SIL CARB 600V 10A TO220-1
