SIDC23D60E6X1SA4
DIODE GP 600V 50A WAFERManufacturer: Infineon Technologies
Categories: Single Diodes
Quality Control: Learn More
Infineon Technologies SIDC23D60E6X1SA4 is a general-purpose diode designed for high-voltage applications. This component offers a 600V reverse voltage rating and a 50A average rectified forward current. Its forward voltage drop is specified at a maximum of 1.25V at 50A. The reverse leakage current is a low 27 µA at 600V. Manufactured using standard diode technology, it features a standard recovery speed exceeding 500ns for currents greater than 200mA. The component is supplied as a die, sawn on foil, suitable for surface mount applications. Operating temperature ranges from -55°C to 150°C. This diode is commonly utilized in power electronics, industrial automation, and renewable energy systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 50A |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 50 A |
| Current - Reverse Leakage @ Vr | 27 µA @ 600 V |
Request a Quote
Clients Also Buy
D126A45CXPSA1
DIODE GEN PURP 4.5KV 200A
BAS1602WH6327XTSA1
DIODE GEN PURP 80V 200MA SCD-80
BAS3005S02LRHE6327XTSA1
DIODE SCHOTT 30V 500MA TSLP-2-17
