SIDC23D60E6X1SA1
DIODE GEN PURP 600V 50A DIEManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies SIDC23D60E6X1SA1 is a general-purpose diode designed for high-voltage applications. This bulk-packaged die offers a maximum DC reverse voltage of 600 V and a substantial average rectified forward current handling capability of 50 A. The forward voltage drop at this current is a maximum of 1.25 V. The device exhibits a reverse leakage current of 27 µA at its rated 600 V. Operating across a junction temperature range of -55°C to 150°C, this diode features a standard recovery time exceeding 500 ns with an Io of over 200 mA. Applications for this component are found in power supply units, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 50A |
| Supplier Device Package | Die |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 50 A |
| Current - Reverse Leakage @ Vr | 27 µA @ 600 V |
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