SIDC161D170HX1SA2
DIODE GP 1.7KV 300A WAFERManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies SIDC161D170HX1SA2 is a General Purpose Diode designed for high-power applications. This component features a 1700 V reverse voltage rating and an average rectified current capability of 300 A. The diode exhibits a forward voltage drop of 1.8 V at its maximum forward current of 300 A and a low reverse leakage current of 27 µA at 1700 V. Operating within a junction temperature range of -55°C to 150°C, it utilizes standard recovery technology with a recovery time greater than 500 ns at 200 mA. The SIDC161D170HX1SA2 is supplied as a bare die, sawn on foil, and is suitable for surface mount applications. This component is frequently utilized in industrial power conversion, motor drives, and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 300A |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1700 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 300 A |
| Current - Reverse Leakage @ Vr | 27 µA @ 1700 V |
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