SIDC14D60E6X1SA4
DIODE GEN PURP 600V 30A DIEManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies SIDC14D60E6X1SA4 is a general-purpose diode supplied as a die. This component features a maximum DC reverse voltage (Vr) of 600 V and an average rectified forward current (Io) of 30 A. The forward voltage (Vf) is specified at a maximum of 1.25 V at 30 A. Reverse leakage current at 600 V is 27 µA. The diode operates with a standard recovery speed exceeding 500 ns for currents greater than 200 mA. Its junction operating temperature range is from -55°C to 150°C. The SIDC14D60E6X1SA4 is suitable for applications in power supplies, industrial motor control, and automotive systems. It is available in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 30A |
| Supplier Device Package | Die |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 30 A |
| Current - Reverse Leakage @ Vr | 27 µA @ 600 V |
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