SIDC14D60E6X1SA1
DIODE GP 600V 30A WAFERManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies SIDC14D60E6X1SA1 is a 600V, 30A general-purpose diode designed for demanding applications. This wafer-level component, supplied sawn on foil, features a standard recovery speed exceeding 500ns with an average rectified current (Io) of 30A. The forward voltage drop (Vf) is a maximum of 1.25V at 30A, and the reverse leakage current (Ir) is a mere 27 µA at 600V. Operating across a wide junction temperature range of -55°C to 150°C, this surface-mount diode is suitable for power factor correction, inverters, and motor control systems in industrial and automotive sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 30A |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 30 A |
| Current - Reverse Leakage @ Vr | 27 µA @ 600 V |
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