SIDC14D120H6X1SA1
DIODE GP 1.2KV 25A WAFERManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies SIDC14D120H6X1SA1 is a 1200V, 25A general-purpose diode fabricated on a wafer, supplied sawn on foil for high-volume semiconductor manufacturing. This device offers a maximum forward voltage of 1.6V at 25A and a reverse leakage current of 27µA at its rated 1200V. The SIDC14D120H6X1SA1 features a standard recovery speed, typically greater than 500ns for currents above 200mA. Operating across a junction temperature range of -55°C to 150°C, this through-silicon via (TSV) die is suitable for demanding applications in power supply, industrial motor control, and electric vehicle charging systems. The component is packaged in bulk.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 25A |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 25 A |
| Current - Reverse Leakage @ Vr | 27 µA @ 1200 V |
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