SIDC11D60SIC3
DIODE SIL CARB 600V 4A WAFERManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies SIDC11D60SIC3 is a 600V, 4A Silicon Carbide (SiC) Schottky diode in a die format, sawn on foil for surface mount applications. Featuring a maximum forward voltage of 1.9V at 4A and a reverse leakage of 200 µA at 600V, this component offers zero reverse recovery time, enabling high-efficiency operation in demanding power electronics. Its low junction capacitance of 150pF at 1V and 1MHz, coupled with an operating junction temperature range of -55°C to 175°C, makes it suitable for high-frequency switching power supplies, solar inverters, and electric vehicle charging infrastructure.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 150pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 4A |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.9 V @ 4 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 600 V |
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