SIDC110D170HX1SA2
DIODE GP 1.7KV 200A WAFERManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies SIDC110D170HX1SA2 is a high-voltage, high-current rectifier diode designed for demanding applications. Featuring a 1700 V reverse voltage rating and a continuous average rectified current capability of 200 A, this component is suitable for power conversion systems. The forward voltage drop is specified at a maximum of 1.8 V at 200 A. Operating over a junction temperature range of -55°C to 150°C, it exhibits a low reverse leakage current of 27 µA at 1700 V. This device utilizes standard recovery technology with a recovery time exceeding 500 ns. The SIDC110D170HX1SA2 is supplied in a sawn-on-foil wafer format for surface mounting, making it ideal for power electronics in industrial motor drives, renewable energy systems, and high-voltage power supplies.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 200A |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1700 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 200 A |
| Current - Reverse Leakage @ Vr | 27 µA @ 1700 V |
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