SIDC105D120H8X1SA1
DIODE GP 1.2KV 200A WAFERManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies SIDC105D120H8X1SA1 is a high-voltage, high-current rectifier diode designed for demanding power applications. This wafer-level component features a maximum DC reverse voltage of 1200 V and an average rectified forward current capability of 200 A. The forward voltage drop is specified at a maximum of 1.41 V at 45 A. Exhibiting a reverse leakage current of 27 µA at its maximum reverse voltage, this diode operates within a junction temperature range of -40°C to 175°C. The device utilizes standard recovery technology, with a recovery time exceeding 500 ns for currents above 200 mA. Packaged as a die sawn on foil for bulk distribution, it is suitable for surface mount configurations. This component finds application in industrial power supplies, electric vehicle charging systems, and renewable energy inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 200A |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.41 V @ 45 A |
| Current - Reverse Leakage @ Vr | 27 µA @ 1200 V |
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