SIDC09D60F6X1SA2
DIODE GP 600V 30A WAFERManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies SIDC09D60F6X1SA2 is a general-purpose diode designed for high-voltage applications. This component offers a maximum DC reverse voltage of 600 V and a forward voltage drop of 1.6 V at a forward current of 30 A. With an average rectified forward current (Io) of 30 A and a reverse leakage current of 27 µA at 600 V, this diode exhibits fast recovery characteristics. The operating junction temperature ranges from -40°C to 175°C. Supplied as a sawn-on-foil wafer for surface mounting, this device is suitable for power electronics, industrial control, and automotive applications where robust performance and efficient switching are critical.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 30A |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 30 A |
| Current - Reverse Leakage @ Vr | 27 µA @ 600 V |
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