SIDC09D60F6X1SA1
DIODE GEN PURP 600V 30A DIEManufacturer: Infineon Technologies
Categories: Single Diodes
Quality Control: Learn More
Infineon Technologies SIDC09D60F6X1SA1 is a general-purpose diode designed for high-voltage applications. This die-level component offers a 600V reverse voltage capability and a 30A average rectified forward current (Io). Featuring a forward voltage drop of 1.6V at 30A and a low reverse leakage current of 27 µA at 600V, it utilizes standard recovery speed with a typical recovery time exceeding 500ns. The operating junction temperature range is -40°C to 175°C. This component is supplied in bulk packaging and is suitable for surface mount configurations. Its robust specifications make it a reliable choice for power supply, motor control, and industrial automation applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 30A |
| Supplier Device Package | Die |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 30 A |
| Current - Reverse Leakage @ Vr | 27 µA @ 600 V |
Request a Quote
Clients Also Buy
D126A45CXPSA1
DIODE GEN PURP 4.5KV 200A
BAS1602WH6327XTSA1
DIODE GEN PURP 80V 200MA SCD-80
BAS3005S02LRHE6327XTSA1
DIODE SCHOTT 30V 500MA TSLP-2-17
