SIDC09D60E6X1SA3
DIODE GEN PURP 600V 20A DIEManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies SIDC09D60E6X1SA3 is a general-purpose diode designed for high-voltage applications. This surface mount die offers a maximum DC reverse voltage of 600 V and an average rectified forward current of 20 A. The forward voltage drop at 20 A is a maximum of 1.7 V. Featuring a fast recovery time of 150 ns, this component is suitable for applications requiring efficient switching. The reverse leakage current at 600 V is a low 27 µA. Operating across a junction temperature range of -55°C to 150°C, this Infineon Technologies diode is commonly utilized in power supply circuits, motor control, and industrial automation systems. The device is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 150 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | Die |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 20 A |
| Current - Reverse Leakage @ Vr | 27 µA @ 600 V |
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