SIDC09D60E6X1SA1
DIODE GP 600V 20A WAFERManufacturer: Infineon Technologies
Categories: Single Diodes
Quality Control: Learn More
Infineon Technologies SIDC09D60E6X1SA1 is a fast-recovery diode designed for high-voltage applications. This component features a maximum reverse voltage of 600 V and an average rectified forward current of 20 A. The forward voltage drop is rated at a maximum of 1.7 V at 20 A. With a reverse leakage current of 27 µA at 600 V, it offers efficient operation. The device has a reverse recovery time (trr) of 150 ns, classifying it under the fast recovery category. Operating across a junction temperature range of -55°C to 150°C, this diode is supplied as a die, sawn on foil, in bulk packaging. Its specifications make it suitable for use in power supply units, motor control, and industrial power conversion systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 150 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 20 A |
| Current - Reverse Leakage @ Vr | 27 µA @ 600 V |
Request a Quote
Clients Also Buy
IDDD04G65C6XTMA1
DIODE SIL CARB 650V 13A HDSOP-10
BAS16E6393HTSA1
DIODE GEN PURP 80V 250MA SOT23
IDH10SG60CXKSA2
DIODE SIL CARB 600V 10A TO220-1
