SIDC09D60E6 UNSAWN
DIODE GP 600V 20A WAFERManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies SIDC09D60E6-UNSAWN is a general-purpose diode designed for high-voltage applications. This component features a 600V reverse voltage rating and a maximum forward current of 20A, with a forward voltage drop of 1.7V at 20A. The diode exhibits a low reverse leakage current of 27 µA at 600V and a reverse recovery time of 150 ns, classifying it as a fast recovery diode. Its operating junction temperature range is from -55°C to 150°C. Supplied as a die sawn on foil, this surface mount component is suitable for demanding applications in power supply units, industrial motor drives, and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 150 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 20 A |
| Current - Reverse Leakage @ Vr | 27 µA @ 600 V |
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