SIDC08D60C6
DIODE GP 600V 30A WAFERManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies SIDC08D60C6 is a general-purpose diode designed for high-voltage applications. This component features a 600 V reverse voltage rating and a high forward current handling capability of 30 A average rectified. The forward voltage drop is a maximum of 1.95 V at 30 A. The device operates with a low reverse leakage current of 27 µA at 600 V. The SIDC08D60C6 utilizes standard recovery speed, with a typical time greater than 500 ns for currents over 200 mA. This diode is supplied as a die, sawn on foil, and offers a surface mount capability. It is designed for operation within a junction temperature range of -40°C to 175°C. Applications for this component include power supplies, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 30A |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.95 V @ 30 A |
| Current - Reverse Leakage @ Vr | 27 µA @ 600 V |
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