SIDC07D60E6X1SA1
DIODE GP 600V 15A WAFERManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies SIDC07D60E6X1SA1 is a general-purpose diode designed for high-voltage applications. This component features a 600 V reverse voltage rating and a 15 A average rectified forward current capability. The forward voltage drop is specified at a maximum of 1.25 V at 15 A. With a reverse leakage current of 250 µA at 600 V, this diode exhibits efficient performance. The SIDC07D60E6X1SA1 utilizes standard recovery technology, offering a recovery time greater than 500 ns for currents exceeding 200 mA. It operates across a junction temperature range of -55°C to 150°C. The component is provided in a wafer form, sawn on foil, suitable for surface mount integration. This diode is commonly found in power supply units, motor control systems, and automotive electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 15A |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 15 A |
| Current - Reverse Leakage @ Vr | 250 µA @ 600 V |
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