SIDC06D60F6X1SA3
DIODE GP 600V 15A WAFERManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies SIDC06D60F6X1SA3 is a General Purpose Diode designed for demanding applications. This component features a 600V reverse voltage (Vr) and a maximum forward voltage (Vf) of 1.6V at 15A. It offers a high average rectified current (Io) of 15A and a low reverse leakage of 27 µA at 600V. The diode operates within a junction temperature range of -40°C to 150°C. The SIDC06D60F6X1SA3 utilizes standard diode technology with a fast recovery time, specified as less than 500ns for currents greater than 200mA. Delivered as a die sawn on foil for surface mount applications, this component is suitable for power switching and rectification in industrial, automotive, and power supply sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 15A |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -40°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 15 A |
| Current - Reverse Leakage @ Vr | 27 µA @ 600 V |
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