SIDC06D60E6X1SA3
DIODE GP 600V 10A WAFERManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies SIDC06D60E6X1SA3 is a general-purpose diode designed for high-voltage applications. This component offers a 600V reverse voltage rating and a continuous average rectified current of 10A. It features a forward voltage drop of 1.25V at 10A and a low reverse leakage current of 27 µA at 600V. The device utilizes standard recovery technology with a speed characteristic of >500ns, >200mA (Io). The SIDC06D60E6X1SA3 is supplied as a die, sawn on foil, for surface mount integration. Operating within a junction temperature range of -55°C to 150°C, this component is suitable for use in power supplies, automotive electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 10 A |
| Current - Reverse Leakage @ Vr | 27 µA @ 600 V |
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