SIDC04D60F6X1SA3
DIODE GP 600V 9A WAFERManufacturer: Infineon Technologies
Categories: Single Diodes
Quality Control: Learn More
Infineon Technologies SIDC04D60F6X1SA3 is a general-purpose diode designed for high-voltage applications. This component offers a 600 V reverse voltage rating and a 9 A average rectified forward current. It features a forward voltage drop of 1.6 V at 9 A and a reverse leakage current of 27 µA at 600 V. The SIDC04D60F6X1SA3 utilizes standard technology and operates within a junction temperature range of -40°C to 150°C. The diode is supplied in a wafer form, sawn on foil, for surface mount integration. Its fast recovery characteristics make it suitable for power factor correction and high-frequency switching applications across industries such as industrial power supplies and automotive electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 9A |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -40°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 9 A |
| Current - Reverse Leakage @ Vr | 27 µA @ 600 V |
Request a Quote
Clients Also Buy
BAS1602WH6327XTSA1
DIODE GEN PURP 80V 200MA SCD-80
BAS3005S02LRHE6327XTSA1
DIODE SCHOTT 30V 500MA TSLP-2-17
IDDD04G65C6XTMA1
DIODE SIL CARB 650V 13A HDSOP-10
