SIDC04D60F6X1SA2
DIODE GEN PURP 600V 9A DIEManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies SIDC04D60F6X1SA2 is a general-purpose diode designed for high-voltage applications. This device features a maximum reverse voltage (Vr) of 600 V and a significant forward current (If) capability of 9 A, with a maximum forward voltage (Vf) of 1.6 V at 9 A. The leakage current at the maximum reverse voltage is rated at 27 µA. Operating across a junction temperature range of -40°C to 175°C, this component utilizes standard recovery technology with a speed specification of >500ns, >200mA (Io). The SIDC04D60F6X1SA2 is supplied as a bare die in bulk packaging, intended for surface mount integration. This diode is commonly found in power supply units, industrial control systems, and automotive electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 9A |
| Supplier Device Package | Die |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 9 A |
| Current - Reverse Leakage @ Vr | 27 µA @ 600 V |
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