SIDC03D60F6X1SA2
DIODE GP 600V 6A WAFERManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies SIDC03D60F6X1SA2 is a general-purpose diode designed for high-voltage applications. This component offers a DC reverse voltage rating of 600 V and an average rectified forward current capability of 6 A. The forward voltage drop is specified at a maximum of 1.6 V at 6 A. It exhibits a low reverse leakage current of 27 µA at 600 V. The diode features a fast recovery time of less than 500 ns for currents greater than 200 mA. It operates over a junction temperature range of -40°C to 150°C. The component is supplied in a wafer form, sawn on foil, suitable for surface mount applications. This technology is commonly integrated into power supplies, motor control systems, and industrial automation equipment.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 6A |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -40°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 6 A |
| Current - Reverse Leakage @ Vr | 27 µA @ 600 V |
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