SIDC03D60F6X1SA1
DIODE GEN PURP 600V 6A DIEManufacturer: Infineon Technologies
Categories: Single Diodes
Quality Control: Learn More
Infineon Technologies SIDC03D60F6X1SA1 is a general-purpose diode designed for high-voltage applications. This device features a 600 V reverse voltage rating and a 6 A average rectified forward current capability. With a maximum forward voltage drop of 1.6 V at 6 A, it offers efficient power handling. The reverse leakage current is a low 27 µA at 600 V. This diode utilizes standard recovery technology, with a speed specification exceeding 500 ns for currents greater than 200 mA. Operating across a junction temperature range of -40°C to 175°C, it is supplied as a die in bulk packaging. This component is suitable for power supply circuits and general rectification in industrial and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 6A |
| Supplier Device Package | Die |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 6 A |
| Current - Reverse Leakage @ Vr | 27 µA @ 600 V |
Request a Quote
Clients Also Buy
IDDD04G65C6XTMA1
DIODE SIL CARB 650V 13A HDSOP-10
BAS16E6393HTSA1
DIODE GEN PURP 80V 250MA SOT23
IDH10SG60CXKSA2
DIODE SIL CARB 600V 10A TO220-1
