SIDC03D120H6X1SA3
DIODE GP 1.2KV 3A WAFERManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies SIDC03D120H6X1SA3 is a general-purpose diode designed for high-voltage applications. This component features a 1200 V reverse voltage rating and a 3 A average rectified forward current capability. The forward voltage drop is specified at a maximum of 1.6 V at 3 A. Reverse leakage current is a low 27 µA at 1200 V. Operating junction temperature ranges from -55°C to 150°C. The device is supplied as a die, sawn on foil, in bulk packaging for surface mount integration. Its standard recovery speed exceeds 500 ns for currents greater than 200 mA. This diode is utilized in power supplies, industrial motor control, and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 3 A |
| Current - Reverse Leakage @ Vr | 27 µA @ 1200 V |
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