SIDC01D120H6
DIODE GP 1.2KV 600MA WAFERManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies SIDC01D120H6 is a General Purpose Diode designed for demanding applications. This component features a 1200 V reverse voltage rating and a 600 mA average rectified forward current. The forward voltage drop is specified at a maximum of 1.6 V at 600 mA. With a reverse leakage of 27 µA at 1200 V, it offers efficient operation. The SIDC01D120H6 utilizes standard recovery speed, with characteristic times greater than 500 ns for currents over 200 mA. This device is supplied as a bare die, sawn on foil, for surface mount integration. Operating temperature ranges from -55°C to 150°C junction. This diode is suitable for power electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 600mA |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 600 mA |
| Current - Reverse Leakage @ Vr | 27 µA @ 1200 V |
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