SDT12S60
DIODE SIL CARB 600V 12A TO220-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ SDT12S60 is a Silicon Carbide Schottky diode featuring a 600V reverse voltage rating and a continuous forward current capability of 12A. This through-hole component, housed in a PG-TO220-2-2 package, exhibits a forward voltage drop of 1.7V at 12A and a reverse leakage current of 400 µA at 600V. Its key characteristic is the absence of reverse recovery charge, indicated by a reverse recovery time of 0 ns, enabling higher switching frequencies and improved system efficiency. The device operates across a junction temperature range of -55°C to 175°C and has a capacitance of 450pF at 1V and 1MHz. Applications for this high-performance diode include power factor correction, photovoltaic inverters, and electric vehicle charging infrastructure.
Additional Information
Series: CoolSiC™+RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 450pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | PG-TO220-2-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 12 A |
| Current - Reverse Leakage @ Vr | 400 µA @ 600 V |
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