SDT10S60
DIODE SIL CARB 600V 10A TO220-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ SDT10S60 is a 600V, 10A Silicon Carbide Schottky diode in a PG-TO220-2-2 package. This through-hole component features a forward voltage of 1.7V at 10A and a reverse leakage of 350µA at 600V. The diode exhibits a capacitance of 350pF at 0V and 1MHz, with a specified operating junction temperature range of -55°C to 175°C. Notably, the SDT10S60 offers zero reverse recovery time for currents greater than 500mA, indicating superior switching performance. This technology is widely adopted in industrial power supplies, electric vehicle charging, and solar inverters.
Additional Information
Series: CoolSiC™+RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 350pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | PG-TO220-2-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 350 µA @ 600 V |
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