SDT10S30
DIODE SIL CARB 300V 10A TO220-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies SDT10S30 is a 300V, 10A Silicon Carbide (SiC) Schottky diode. This through-hole component, housed in a PG-TO220-2-2 package, offers a forward voltage drop of 1.7V at 10A and a reverse leakage current of 200 µA at 300V. Key features include a zero reverse recovery time, indicating no recovery time greater than 500mA (Io), and a junction operating temperature range of -55°C to 175°C. The diode exhibits a capacitance of 600pF at 0V and 1MHz. This device is utilized in applications such as power factor correction, inverters, and power supplies within the automotive and industrial sectors.
Additional Information
Series: CoolSiC™+RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 600pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | PG-TO220-2-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 300 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 300 V |
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