SDT08S60
DIODE SIL CARB 600V 8A TO220-2-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies' SDT08S60 is a Silicon Carbide (SiC) Schottky diode from the CoolSiC™+ series. This through-hole component, packaged in a PG-TO220-2-2, offers a maximum DC reverse voltage of 600 V and an average rectified current handling of 8 A. It features a typical forward voltage drop of 1.7 V at 8 A and a reverse leakage current of 300 µA at 600 V. The device exhibits zero reverse recovery time (trr) for currents greater than 500 mA (Io), contributing to highly efficient switching performance. Operating junction temperatures range from -55°C to 175°C. The SDT08S60 is suitable for applications in power factor correction, inverter stages, and power supply designs across various industrial and automotive sectors where high efficiency and robust performance are critical.
Additional Information
Series: CoolSiC™+RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 280pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | PG-TO220-2-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Current - Reverse Leakage @ Vr | 300 µA @ 600 V |
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