SDT05S60
DIODE SIL CARB 600V 5A TO220-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ SDT05S60 is a 600V, 5A Silicon Carbide Schottky diode. This component, housed in a PG-TO220-2-2 package for through-hole mounting, offers a forward voltage (Vf) of 1.7V at 5A. It features a low reverse leakage current of 200 µA at 600V and exhibits no recovery time above 500mA. The junction operating temperature range is -55°C to 175°C. Capacitance is rated at 170pF at 1V, 1MHz. This diode is suitable for applications in electric vehicle charging, industrial power supplies, and solar inverters.
Additional Information
Series: CoolSiC™+RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 170pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | PG-TO220-2-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 5 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 600 V |
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