SDT04S60
DIODE SIL CARB 600V 4A TO220-2-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies' CoolSiC™+ SDT04S60 is a 600V, 4A Silicon Carbide Schottky diode in a PG-TO220-2-2 package. This through-hole component offers a forward voltage (Vf) of 1.9V at 4A and a reverse leakage current of 200 µA at 600V. Featuring zero reverse recovery time (trr) for currents over 500mA (Io), this diode is suitable for demanding applications. Its junction operating temperature range is -55°C to 175°C. The capacitance at Vr is 150pF at 0V and 1MHz. This device is utilized in industrial power supplies, electric vehicle charging, and solar inverters.
Additional Information
Series: CoolSiC™+RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 150pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 4A |
| Supplier Device Package | PG-TO220-2-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.9 V @ 4 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 600 V |
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