SDP10S30
DIODE SIL CARB 300V 10A TO220-3Manufacturer: Infineon Technologies
Categories: Single Diodes
Quality Control: Learn More
Infineon Technologies SDP10S30 is a Silicon Carbide (SiC) Schottky diode from the CoolSiC™+ series, featuring a 300V reverse voltage and 10A average rectified current. This through-hole component, packaged in a PG-TO220-3, offers a forward voltage drop of 1.7V at 10A. Notably, it exhibits zero reverse recovery time, exceeding 500mA of forward current. The diode has a junction operating temperature range of -55°C to 175°C and a reverse leakage current of 200 µA at its maximum reverse voltage. Its capacitance is rated at 600pF at 0V and 1MHz. This component is suitable for applications in power electronics, including industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: CoolSiC™+RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 600pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | PG-TO220-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 300 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 300 V |
Request a Quote
Clients Also Buy
IDH04G65C5XKSA2
DIODE SIL CARB 650V 4A TO220-2-1
IDM05G120C5XTMA1
DIODE SIL CARB 1.2KV 5A TO252-2
IDH20G65C5XKSA2
DIODE SIL CARB 650V 20A TO220-1
