SDP06S60
DIODE SIL CARB 600V 6A TO220-3-1Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies SDP06S60 is a 600V, 6A Silicon Carbide Schottky diode. This through-hole component, housed in a PG-TO220-3-1 package, features a low forward voltage of 1.7V at 6A and a reverse leakage current of 200 µA at 600V. The SDP06S60 exhibits exceptional performance with a reverse recovery time of 0 ns, indicating no recovery time above 500mA. Its operating junction temperature ranges from -55°C to 175°C. This diode's characteristics make it suitable for applications in power supplies, electric vehicle charging, and industrial motor control.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 300pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 6A |
| Supplier Device Package | PG-TO220-3-1 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 6 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 600 V |
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