SDD04S60
DIODE SIL CARB 600V 4A TO252-31Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies presents the CoolSiC™+ series SDD04S60, a 600V, 4A Silicon Carbide Schottky diode. This surface mount component, housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package (PG-TO252-3-11), offers a forward voltage of 1.9V at 4A and a reverse leakage current of 200 µA at 600V. Notably, it features zero reverse recovery time, enabling high-speed switching. The device operates across a junction temperature range of -55°C to 175°C and has a capacitance of 150pF at 0V and 1MHz. This diode is suitable for demanding applications within automotive, industrial power supplies, and renewable energy sectors. The SDD04S60 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: CoolSiC™+RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 150pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 4A |
| Supplier Device Package | PG-TO252-3-11 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.9 V @ 4 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 600 V |
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