SDB06S60
DIODE SIL CARB 600V 6A TO263Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ SDB06S60 is a 600V, 6A silicon carbide Schottky diode in a PG-TO263-2 package. This surface mount device features a maximum forward voltage (Vf) of 1.7V at 6A and a reverse leakage current of 200 µA at 600V. The SDB06S60 exhibits zero reverse recovery time for currents greater than 500mA (Io), making it suitable for high-frequency switching applications. Its operating junction temperature range is -55°C to 175°C. This component is commonly utilized in power factor correction, switch-mode power supplies, and electric vehicle charging infrastructure. The diode is supplied on tape and reel.
Additional Information
Series: CoolSiC™+RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 300pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 6A |
| Supplier Device Package | PG-TO263-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 6 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 600 V |
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