ND242S10KHPSA1
DIODE GEN PURP 1KV 261A PB50ND-1Manufacturer: Infineon Technologies
Categories: Single Diodes
Quality Control: Learn More
Infineon Technologies ND242S10KHPSA1 is a standard recovery general-purpose diode designed for high-power applications. This module-style component features a 1000 V reverse voltage rating and a substantial 261 A average rectified forward current (Io). It exhibits a reverse leakage current of 200 mA at 1000 V. Engineered for robust performance, it operates within a junction temperature range of -40°C to 135°C. The device utilizes a chassis mount for effective thermal management. Its standard recovery speed exceeds 500 ns. This diode is suitable for use in industrial power conversion, motor control, and power generation systems. The component is supplied in tray packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 261A |
| Supplier Device Package | BG-PB50ND-1 |
| Operating Temperature - Junction | -40°C ~ 135°C |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Current - Reverse Leakage @ Vr | 200 mA @ 1000 V |
Request a Quote
Clients Also Buy
BAS3005S02LRHE6327XTSA1
DIODE SCHOTT 30V 500MA TSLP-2-17
IDDD04G65C6XTMA1
DIODE SIL CARB 650V 13A HDSOP-10
PX8746JDNG029XTMA1
LED PX8746JDNG029XTMA1
